About us

01

Company Overview

Floadia Corporation

In 2011, 7 engineers left Renesas and established Floadia to provide the best Non-Volatile Memory technology to the world.
The company licenses its intellectual property (IP), including manufacturing process and circuit designs, necessary for embedded memory production.
Floadia is a team of experienced engineers who were developing embedded memory for more than 20 years. Floadia’s development team comprises not only with memory engineers and circuit designers but also people with deep knowledge in the manufacturing process and quality assurance to provide full range of service.

Trade name: Floadia Corporation
Founded: April 25, 2011
Location: 1-30-9 Ogawa Higashi-cho, Kodaira-shi, Tokyo, 187-0031, JAPAN
Phone: +81-42-346-5510
President & CEO: Kosuke Okuyama
Bank: MUFG Bank, Ltd
Business: Development, Consulting, License & Sales of Semiconductor IPs
Overseas contact: Floadia Taiwan Branch

R612/ R618, Center of Innovative Incubator, NTHU No. 101, Section 2, Guangfu Road, Hsinchu, Taiwan 30013, R.O.C.

Tel.+886-3-5613922

Europe/Israel Sales

Wim Rijlaarsdam ing.

Tel.+32-468-225-968

US Sales

Elly Chang.

Tel.+886-3-5613922

Major Business Milestones

2023: LEE-Flash G1 on TSMC 130BCD+ fully qualified and ready for mass production
2022: Series C Funding completed (1,200M￥）
2021: Auto grade 0 LEE-Flash ZT 180BCD starts mass production
2020: Toshiba starts mass production of LEE-Flash G1 for its MCU
2017: Establish Floadia Taiwan Branch Office for the collaborations with foundries; Series B Funding (1,600M￥）
2015: Series A Funding (800M￥）
2014: LEE-Flash G1 starts mass production for smart phone IC in PSMC
2013: Auto Grade 0 LEE-Flash ZT starts mass production Japanese IDM
2011: Founded Floadia Corp.