LEE Flash ZT
LEE Flash G1
LEE Flash G2
Non Volatile SRAM
Floadia Top page
Floadia Announces eNVM of 150 degree C retention on HHGrace 180BCD
Floadia Raises 1.2 Billion Yen to Develop New Memory Technology That Can Be Disruptor in AI Edge Computing
TOSHIBA announced press release of Microcontroller Product employing Floadia’s SONOS type Flash Memory IP “G1”.
SemiIsrael Expo 2018
Floadia G1 eFlash IP has exceeded 30,000 wafers shipment at Powerchip for system LSI customers.
See you at “TGS Japan 2018” !
CEO & President Okuyama awarded by Forbes Japan
Floadia completes Series B funding with 1.6 Billion Yen
Floadia selected for “2016 Innovation Showcase Company”
ZT proven on Maxchip 0.18BCD.